The SiC automotive inverter market is broad

Recently, the international research agency Yole Group released a report indicating that the largest application market for SiC is the electric vehicle market. According to Yole analysts, SiC has gradually played a major role in EV main-drive inverters. In 2023, the global SiC market has reached $2.7 billion, with automotive applications accounting for 70% to 80% of the market. With the future shift towards an 800V electrical architecture, high-voltage SiC power components are expected to become standard in main-drive inverters.

This article introduces SiC broad prospects for the automotive inverter market and major SiC power device suppliers along with their new products and technological advantages.

SiC CAGR to reach 19.6% over the next five years, with broad prospects for the automotive inverter market

From a physical standpoint, SiC’s bandgap is about three times wider than Si, and its breakdown field is approximately ten times stronger, giving SiC superior voltage resistance. This makes SiC materials ideal for high-voltage applications. SiC is mainly used in high-power, high-voltage, and high-frequency areas, with electric vehicles, industrial equipment, and renewable energy systems being key application fields.

According to Yole Group, the SiC power device market is expected to reach $10 billion by 2029, with new energy vehicles being the largest downstream application for SiC power devices. Key EV components include OBC, DC-DC converters, and drive units (traction inverters, motors, etc.). Among these, traction inverters have the highest SiC module usage. After 2021, pure electric vehicles with traction inverters requiring over 300A of current and high voltage above 400V are adopting all-SiC modules. ROHM has launched products addressing these market demands.

Onsemi showcased high-power SiC B2S modules

To meet the high-power requirements of EV main-drive inverters, Onsemi exhibited its high-power SiC B2S module at the PCIM Asia exhibition. The module adopts a plastic encapsulated half-bridge design, featuring low parasitic inductance and high reliability. It integrates the latest M3 SiC technology, with a maximum temperature tolerance of 175°C. Advanced silver sintering enables low thermal resistance and high performance.

A SiC inverter is primarily applied in 800V high-voltage platforms, supporting fast-charging flagship models. The SiC module is more expensive than IGBT modules; however, comparing a 300kW SiC demo board with a 300kW IGBT board, the SiC module is significantly lighter and occupies less board space, aligning with the trends of lightweight and compact designs.

Additionally, Onsemi offers various custom connection options, including silver sintering, to accommodate different customer needs. Onsemi’s products support flexible power configurations up to 400kW, meeting the diverse needs of inverter manufacturers. Onsemi SiC chips have covered over 9 billion kilometers of vehicle mileage from January 2022 to July 2024, with NIO and Hyundai among the automakers partnering with Onsemi.

Infineon displayed the HybridPACK™ Drive G2 Fusion

At this exhibition, Infineon showcased its HybridPACK™ Drive G2 Fusion module and Chip Embedding power devices. Chip Embedding can be directly integrated into PCBs, achieving extremely low parasitic inductance and high integration.

Staff at the booth explained that Chip Embedding is applicable to the 800V voltage platform. Compared to other manufacturers’ modules, this product is directly integrated into the PCB, offering miniaturization, high integration, and high power density, making it an innovative product exclusive to Infineon.

The HybridPACK™ Drive G2 Fusion module combines inverter IGBT and SiC chips, maximizing the potential of SiC in traction inverters. Infineon’s G2 Fusion module is designed for hybrid and electric vehicle traction systems. The second-generation HybridPACK Drive G2 features EDT3 (Si IGBT) and CoolSiC G2 MOSFET technologies, supporting 400V vehicle systems. The evaluation kit supports 200kW main-drive motor inverter applications, striking the best balance between cost and efficiency through a smart combination of Si and SiC chips.

ROHM's three-phase full-bridge evaluation kit

At ROHM’s booth, the focus was on the three-phase full-bridge evaluation kit based on the TRCDRIVE pack™ SiC molded module. ROHM’s Su Yongjin highlighted that the TRCDRIVE pack™ is designed for automotive main-drive inverters. Its key features include miniaturization and high power, with four main advantages: first, the series is built with fourth-generation SiC MOSFETs using trench technology, achieving ultra-low on-resistance per unit area in the industry; second, it optimizes substrate layout for low parasitic inductance, reducing switching losses compared to traditional modules;

third, the module utilizes press-fit pins and molded packaging to achieve a high density 1.5 times that of conventional SiC molded modules; fourth, this two-in-one SiC module series is available in two voltage ratings: 750V and 1200V, suitable for 400V and 800V platforms respectively, supporting high-power applications and driving the miniaturization trend in xEV inverters.

The new TRCDRIVE pack™ product is set to enter mass production in June 2024, with an initial monthly output of 100,000 units. At PCIM Asia, Norman Roth, senior executive vice president of Bosch Smart Mobility Group’s China region board, and president of Bosch Automotive Electronics Division China, told reporters that “IGBTs are still primarily used in 400V low-voltage platforms, as they are more cost-effective.

This year, flagship EV models have increasingly adopted 800V high-voltage platforms, and SiC devices offer better acceleration, lower switching losses, and can extend range by up to 6% compared to traditional IGBTs with the same inverter battery capacity.”

Bosch Semiconductor exhibited silicon carbide chips

Bosch Semiconductor showcased its second-generation SiC discrete devices. Compared to the first generation, the second-generation SiC chip delivers higher power density and efficiency and improves the body diode to enhance switching speed. This reduces dv/dt by 50% while maintaining the same switching speed, reducing Rdson per unit area by 30%. Bosch’s patented trench technology outperforms planar SiC technology in terms of chip performance, output, and cost control.

Bosch displayed its second-generation SiC MOSFET chips, advanced modules, and electric drive systems. Bosch's 1200V SiC MOSFET chips are available in six product options, and its 1200V SiC power modules are offered in four variants, suitable for 800V high-voltage platforms. Bosch also noted that its SiC chips can be flexibly customized to meet the needs of OEMs, tier-1 suppliers, and distributors in terms of chip layout, electrical performance, and process requirements.

You can check top 10 PV inverter companies for more details.

Conclusion

The automotive inverter market is set to experience rapid growth over the next five years. According to TrendForce, the global SiC (silicon carbide) power device market continued its strong growth in 2023, with the top five SiC power device suppliers accounting for approximately 91.9% of the market revenue.

STMicroelectronics (ST) leads with a 32.6% market share, followed by Onsemi (23.6%), Infineon (16.5%), Wolfspeed (11.1%), and ROHM (8%). The release of new SiC devices by four international giants highlights their technological and supply chain advantages in this market.

Chinese SiC manufacturers are also accelerating their progress. In the SiC device sector, companies like Xilinx Integration, Silan Micro, Jita Semiconductor, Sanan Semiconductor, Basic Semiconductor, Techwell, Wingtech, and Yangjie Technology are actively developing and launching products. Over the next three years, China’s SiC device market share is expected to grow significantly.

Related articles: home inverter near me, inverter buying guide, inverter cooling